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| 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 3.8 m (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) Low leakage current: IDSS = 100 A (VDS = 30 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC (Note 1) Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 30 75 A 300 125 731 75 12.5 150 -55 to 150 W mJ A mJ C C Unit V V V Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.00 Unit C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. 4 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 25 V, Tch = 25C (initial), L = 95 H, IAR = 75 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 1 2002-03-04 2SK3389 Electrical Characteristics (Note 4) (Tc = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 24 V, VGS = 10 V, ID = 75 A - Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 ID = 38 A VOUT RL = 0.39 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 38 A VDS = 10 V, ID = 38 A Min 30 2.0 35 Typ. 3.8 70 3530 570 1870 10 25 20 65 62 43 19 Max 10 100 4.0 5.0 ns nC pF Unit A A V V m S VDD 15 V - Duty < 1%, tw = 10 s = Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don't connect and ground it.) Source-Drain Ratings and Characteristics (Note 5) (Tc = 25C) Characteristics Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition IDR1 = 75 A, VGS = 0 V IDR = 75 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 120 180 Max 75 300 1 4 -1.5 Unit A A A A V ns nC Note 5: drain, flowing current value between the S2 pin, open the S1 pin drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. Marking Lot Number K3389 Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-03-04 2SK3389 ID - VDS 100 Common source Tc = 25C Pulse test 200 5.75 8 6 160 10 8 6.5 ID - VDS Common source Tc = 25C Pulse test 6 120 5.5 80 5 40 VGS = 4.5 V VGS = 4.5 V 0 0 2 4 6 8 10 80 (A) ID 60 5.25 5 Drain current 40 4.75 20 0 0 0.2 0.4 0.6 0.8 1.0 Drain-source voltage VDS (V) Drain current ID 10 (A) 5.5 Drain-source voltage VDS (V) ID - VGS 200 Common source VDS = 10 V 160 Pulse test 0.5 VDS - VGS Common source (V) Tc = 25C 0.4 Pulse test (A) Drain-source voltage VDS ID 120 0.3 Drain current 80 0.2 ID = 75 A 40 Tc = 100C 0.1 35 15 -55 25 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 1000 100 Common source VDS = 10 V -55 Tc = 100C Pulse test 100 25 Common source Tc = 25C Pulse test 10 RDS (ON) - ID Yfs (S) Forward transfer admittance Drain-source on resistance RDS (ON) (m) VGS = 10 V 15 V 1 10 1 1 10 100 1000 0.1 1 10 100 1000 Drain current ID (A) Drain current ID (A) 3 2002-03-04 2SK3389 RDS (ON) - Tc 10 Common source VGS = 10 V Pulse test 1000 Common source Tc = 25C Pulse test 100 10 IDR - VDS Drain-source on resistance RDS (ON) (m ) 8 35 6 ID = 70 15 4 Drain reverse current IDR (A) 5 10 3 1 VGS = 0 1 0 2 0 -80 -40 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 1.2 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 100000 5 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test 3 Gate threshold voltage Vth (V) 4 (pF) 10000 Ciss Coss 1000 Crss Capacitance C 2 100 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 10 0.1 1 10 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 200 40 Dynamic input/output characteristics 16 Common source ID = 75 A Tc = 25C Pulse test VDS 20 6 VDD = 24 V 12 8 (W) (V) 160 PD Drain-source voltage VDS Drain power dissipation 80 10 VGS 4 40 10 0 40 80 120 160 200 0 0 20 40 60 0 80 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-03-04 Gate-source voltage 120 VGS 30 12 (V) 2SK3389 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.00001 PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 0.0001 0.001 0.01 0.1 1 10 Single Pulse width tw (s) Safe operating area 1000 ID max (pulsed) * 100 s * 1000 EAS - Tch (mJ) EAS Aavalanche energy 800 (A) 100 ID max (continuous) 10 1 ms * ID 600 Drain current DC operation Tc = 25C 400 *: Single nonrepetitive pulse Tc = 25C 1 Curves must be derated linearly with increase in temperature 0.1 0.1 1 200 VDSS max 10 100 0 25 50 75 100 125 150 Drain-source voltage VDS (V) Channel temperature (initial) Tch (C) 15 V 0V BVDSS IAR VDD VDS Waveform AS = 1 B VDSS L I2 B 2 VDSS - VDD Test circuit RG = 25 VDD = 25 V, L = 95 H 5 2002-03-04 2SK3389 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-03-04 |
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